Intel Corp. and Micron Technology Inc. today are set to unveil a jointly developed 34-nanometer, 32-gigabit NAND flash memory chip that should enable the production of cheaper solid-state drives with ...

Manufactured in a 50-nm process technology, the 16-Gbit flash memory device from Samsung employs a 4-kbyte page size to enhance performance. Samsung Electronics Co. Ltd. has started sampling its ...

South Korea's SK Hynix Inc has developed its most advanced NAND flash chip made up of 238 layers of memory cells for use in PC storage devices and later smartphones and servers, the world's ...

Micron Technology Inc on Tuesday said it started shipping its most advanced NAND flash chip made up of 232 layers of memory cells that can support intense data use from consumer gadgets, cars and data ...

NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...